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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

Categories Power Mosfet Transistor
Brand Name: MOTOROLA
Model Number: MLP1N06CLG
Certification: Original Factory Pack
Place of Origin: Original
MOQ: 20pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
VDSS: Clamped Vdc
VDGR: Clamped Vdc
VGS: ±10 Vdc
ID: Self–limited 1.8 Adc
PD: 40 Watts
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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe


Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET


These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.


The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature.


• Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Protects the Load From Overvoltage

• Integrated ESD Diode Protection

• Controlled Switching Minimizes RFI

• Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors


MAXIMUM RATINGS

RatingSymbolValueUnit
Drain–to–Source VoltageVDSSClampedVdc

Drain–to–Gate Voltage

(RGS = 1.0 MΩ)

VDGRClampedVdc

Gate–to–Source Voltage

— Continuous

VGS±10Vdc
Drain Current — Continuous Drain Current — Single Pulse

ID

IDM

Self–limited 1.8Adc
Total Power DissipationPD40Watts
Electrostatic Discharge Voltage (Human Body Model)ESD2.0kV
Operating and Storage Junction Temperature RangeTJ, Tstg–50 to 150°C


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Cheap MLP1N06CLG  Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe for sale
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