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BC847B Vacuum Triode Amplifier Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Categories Electronic IC Chip
Model Number: BC847B
Place of Origin: Original
Brand Name: Original Manufacturer
Certification: Rosh
MOQ: 1
Price: Negotiation
Packaging Details: Original Packing
Delivery Time: In stock
Payment Terms: TT, Paypal, Western Union And So On
Supply Ability: 80000
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
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BC847B Vacuum Triode Amplifier Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)


BC847B Vacuum Triode Amplifier Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)


Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Power - Max300mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO 65 45 30 Vdc Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO 80 50 30 Vdc Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 VEBO 6.0 6.0 5.0 Vdc Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. ORDERING INFORMATION 1


Cheap BC847B Vacuum Triode Amplifier Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236) for sale
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