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SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

Categories IC Memory Chip
Brand Name: ISSI
Model Number: IS61WV25616BLL-10TLI
Certification: Original Parts
Place of Origin: Orignal
MOQ: 1 piece
Price: Negotiation
Payment Terms: T/T, PayPal, Western Union, Escrow and others
Supply Ability: 500-2000pcs per month
Packaging Details: 10cm X 10cm X 5cm
Delivery Time: 3-5 work days
Item NO.: IS61WV25616BLL-10TLI
Memory Type: Volatile
Memory Format: SRAM
Memory Size: Memory Size
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SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44


IC CHIP SRAM IS61WV25616BLL-10TLI Memory IC Chip - Asynchronous Memory IC 4Mb Parallel 10ns TSOP44


FEATURES:


HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical) CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM:

DESCRIPTION

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated usingISSI's high- performance CMOS technology. This highly reliable pro- cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de- vices.


When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.


Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.


The IS61WV25616Axx/Bxx and IS64WV25616Bxx are packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 3.3V + 5%


SymbolParameterTest ConditionsMin.Max.Unit
VOHOutput HIGH VoltageVDD = Min., IOH = –4.0 mA2.4V
VOLOutput LOW VoltageVDD = Min., IOL = 8.0 mA0.4V
VIHInput HIGH Voltage2VDD + 0.3V
VILInput LOW Voltage(1)–0.30.8V
ILIInput LeakageGND £ VIN £ VDD–11µA
ILOOutput LeakageGND £ VOUT £ VDD, Outputs Disabled–11µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.


DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 2.4V-3.6V


SymbolParameterTest ConditionsMin.Max.Unit
VOHOutput HIGH VoltageVDD = Min., IOH = –1.0 mA1.8V
VOLOutput LOW VoltageVDD = Min., IOL = 1.0 mA0.4V
VIHInput HIGH Voltage2.0VDD + 0.3V
VILInput LOW Voltage(1)–0.30.8V
ILIInput LeakageGND £ VIN £ VDD–11µA
ILOOutput LeakageGND £ VOUT £ VDD, Outputs Disabled–11µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.


DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 1.65V-2.2V


SymbolParameterTest ConditionsVDDMin.Max.Unit
VOHOutput HIGH VoltageIOH = -0.1 mA1.65-2.2V1.4V
VOLOutput LOW VoltageIOL = 0.1 mA1.65-2.2V0.2V
VIHInput HIGH Voltage1.65-2.2V1.4VDD + 0.2V
VIL(1)Input LOW Voltage1.65-2.2V–0.20.4V
ILIInput LeakageGND £ VIN £ VDD–11µA
ILOOutput LeakageGND £ VOUT £ VDD, Outputs Disabled–11µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

AC TEST CONDITIONS


ParameterUnitUnitUnit
(2.4V-3.6V)(3.3V +10%)(1.65V-2.2V)
InputPulseLevel0Vto3V0Vto3V0Vto1.8V
Input Rise and Fall Times1V/ ns1V/ ns1V/ ns
InputandOutputTiming andReferenceLevel(VRef)1.5V1.5V0.9V
OutputLoadSee Figures 1 and 2See Figures 1 and 2See Figures 1 and 2
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