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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

Categories Computer IC Chip
Brand Name: IR
Model Number: IR2011STRPBF
Place of Origin: THAILAND
Price: Negotiation
Payment Terms: T/T, Western Union , ESCROW
Supply Ability: 50000PCS
Delivery Time: STOCK
Packaging Details: 2500PCS/REEL
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output: 1A, 1A
High Side Voltage: 200V
Rise / Fall Time (Typ): 35ns, 20ns
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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver


·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune

·Gate drive supply range from 10V to 20V

·Independent low and high side channels

·Input logicHIN/LIN active high

·Undervoltage lockout for both channels

·3.3V and 5V input logic compatible

·CMOS Schmitt-triggered inputs with pull-down

·Matched propagation delay for both channels ·Also available LEAD-FREE (PbF)


·Audio Class D amplifiers ·High power DC-DC SMPS converters

·Other high frequency applications


The IR2011 isa high power, high speed powerMOSFET driver with independenthigh and low side referenced output channels, idealforAudio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction.

Product AttributesSelect All
CategoriesIntegrated Circuits (ICs)
PackagingTape & Reel (TR)
Part StatusActive
Driven ConfigurationHalf-Bridge
Channel TypeIndependent
Number of Drivers2
Gate TypeN-Channel MOSFET
Voltage - Supply10 V ~ 20 V
Logic Voltage - VIL, VIH0.7V, 2.2V
Current - Peak Output (Source, Sink)1A, 1A
Input TypeInverting
High Side Voltage - Max (Bootstrap)200V
Rise / Fall Time (Typ)35ns, 20ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Base Part NumberIR2011SPBF

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