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CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

Categories Mosfet Power Transistor
Brand Name: Ti
Model Number: CSD25402Q3A
MOQ: Contact us
Price: Contact us
Payment Terms: Paypal, Western Union, TT
Supply Ability: 50000 Pieces per Day
Delivery Time: The goods will be shipped within 3 days once received fund
Packaging Details: VDFN8
Channel Mode: Enhancement
Configuration: Single
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C
Vgs th - Gate-Source Threshold Voltag: 650 mV
Rds On - Drain-Source Resistance: 8.9 mOhms
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CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET


1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance

  • Low RDS(on)

  • Pb and Halogen Free

  • RoHS Compliant

  • SON 3.3 mm × 3.3 mm Plastic Package


2 Applications

  • DC-DC Converters

  • Battery Management

  • Load Switch

  • Battery Protection


3 Description

This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.


Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

–20

V

Qg

Gate charge total (–4.5 V)

7.5

nC

Qgd

Gate charge gate to drain

1.1

nC

RDS(on)

Drain-to-source on resistance

VGS = –1.8 V

74

VGS = –2.5 V

13.3

VGS = –4.5 V

7.7

Vth

Threshold voltage

–0.9

V


Ordering Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD25402Q3A

2500

13-Inch Reel

SON 3.3 mm × 3.3 mm Plastic Package

Tape and Reel

CSD25402Q3AT

250

7-Inch Reel


Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

–20

V

VGS

Gate-to-source voltage

+12 or –12

V

ID

Continuous drain current, TC = 25°C

–76

A

Continuous drain current (package limit)

–35

A

Continuous drain current(1)

–15

A

IDM

Pulsed drain current(2)

–148

A

PD

Power dissipation(1)

2.8

W

Power dissipation, TC = 25°C

69

TJ

Operating junction temperature

–55 to 150

°C

Tstg

Storage temperature

–55 to 150

°C

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