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CSD18540Q5B RF Power Mosfet Transistors , N Channel Mosfet Circuit NexFET Pwr MOSFET

Categories Mosfet Power Transistor
Brand Name: Ti
Model Number: CSD18540Q5B
MOQ: Contact us
Price: Contact us
Payment Terms: Paypal, Western Union, TT
Supply Ability: 50000 Pieces per Day
Delivery Time: The goods will be shipped within 3 days once received fund
Packaging Details: VSON8
Channel Mode: Enhancement
Configuration: Single
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 2.2 mOhms
2.2 mOhms: 100 A
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CSD18540Q5B RF Power Mosfet Transistors , N Channel Mosfet Circuit NexFET Pwr MOSFET

CSD18540Q5B Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET


1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance

  • Avalanche Rated

  • Lead-Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package


2 Applications

  • DC-DC Conversion

  • Secondary Side Synchronous Rectifier

  • Isolated Converter Primary Side Switch

  • Motor Control


3 Description

This 1.8-mΩ, 60-V NexFETTM power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.


Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

Qg

Gate Charge Total (10 V)

41

nC

Qgd

Gate Charge Gate-to-Drain

6.7

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 4.5 V

2.6

VGS =10V

1.8

VGS(th)

Threshold Voltage

1.9

V


Device Information

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD18540Q5B

2500

13-Inch Reel

SON 5.00-mm × 6.00-mm Plastic Package

Tape and Reel

CSD18540Q5BT

250

7-Inch Reel


Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package Limited)

100

A

Continuous Drain Current (Silicon Limited), TC = 25°C

205

Continuous Drain Current(1)

29

IDM

Pulsed Drain Current, TA = 25°C(2)

400

A

PD

Power Dissipation(1)

3.8

W

Power Dissipation, TC = 25°C

188

TJ, Tstg

Operating Junction, Storage Temperature

–55 to 175

°C

EAS

Avalanche Energy, Single Pulse ID =80A,L=0.1mH,RG =25Ω

320

mJ

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