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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

Categories Mosfet Power Transistor
Brand Name: Ti
Model Number: CSD17308Q3
MOQ: Contact us
Price: Contact us
Payment Terms: Paypal, Western Union, TT
Supply Ability: 50000 Pieces per Day
Delivery Time: The goods will be shipped within 3 days once received fund
Packaging Details: SON8
Channel Mode: Enhancement
Configuration: Single
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
CSD17308Q3: 3.9 nC
Vgs - Gate-Source Voltage: 8 V
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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET


1 Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • VSON 3.3 mm × 3.3 mm Plastic Package


2 Applications

  • Notebook Point of Load

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems


3 Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.


Product Summary

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

30

V

Qg

Gate charge total (4.5 V)

3.9

nC

Qgd

Gate charge gate to drain

0.8

nC

RDS(on)

Drain-to-source on resistance

VGS = 3 V

12.5

VGS = 4.5 V

9.4

VGS = 8 V

8.2

VGS(th)

Threshold voltage

1.3

V


Ordering Information

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD17308Q3

2500

13-Inch Reel

SON 3.3 mm × 3.3 mm Plastic Package

Tape and Reel


Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-source voltage

30

V

VGS

Gate-to-source voltage

+10 / –8

V

ID

Continuous Drain Current (Package Limited)

50

A

Continuous drain current, TC = 25°C

44

Continuous drain current(1)

14

IDM

Pulsed drain current, TA = 25°C(2)

167

A

PD

Power dissipation(1)

2.7

W

Power Dissipation, TC = 25°C

28

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche energy, single pulse ID =36A,L=0.1mH,RG =25Ω

65

mJ

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