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Single Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...
Single Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ... more
Brand Name:MMR
Place of Origin:China
D/C:Newest
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... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ...
... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ... more
Brand Name:ST
Model Number:STGW80H65DFB
Place of Origin:Original
STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
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...Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation...
...Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation... more
Brand Name:Lite-On Inc.
Model Number:LTV-356T-D
Place of Origin:original
LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver
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... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its
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... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you
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... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for
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...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ...
...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ... more
Brand Name:International Rectifier
Model Number:IRG4PH50UD
Part number:IRG4PH50UD
Durable Insulated Gate Bipolar Transistor Multipurpose IRG4PH50UD
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...
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...IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding inverter applications. The Infineon Reverse Conducting IGBTs allow access to high-performance technology for cost-sensitive users. The IGBTs...
...IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding inverter applications. The Infineon Reverse Conducting IGBTs allow access to high-performance technology for cost-sensitive users. The IGBTs... more
Brand Name:Infineon Technologies
Model Number:IKWH50N65WR6XKSA1
Minimum Order Quantity:50pcs
IKWH50N65WR6XKSA1 Insulated Gate Bipolar Transistor 650V For Home Appliances
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Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *...
Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *... more
Brand Name:ABB
Model Number:FS450R17KE3/AGDR-71C S
Place of Origin:SWEDEN
ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE
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5pcsTO247 50JR22 TO247 N CHANNEL IGBT transistor GT50JR22 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px;padding...
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage...
PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Minimum Order Quantity:1 piece
Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High...
GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High... more
Brand Name:TOSHIBA
Model Number:GT20J301
Place of Origin:JAPAN
GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...
IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ... more
Brand Name:Texas Instruments
Model Number:TCAN1042GDQ1
Place of Origin:N/S
Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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...IGBT Modules FF600R12ME4WB73BPSA1 600A Transistors IGBT Modules Product Description Of FF600R12ME4WB73BPSA1 FF600R12ME4WB73BPSA1 is EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules,feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FF600R12ME4WB73BPSA1 Part Number FF600R12ME4WB73BPSA1 Gate...
...IGBT Modules FF600R12ME4WB73BPSA1 600A Transistors IGBT Modules Product Description Of FF600R12ME4WB73BPSA1 FF600R12ME4WB73BPSA1 is EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules,feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FF600R12ME4WB73BPSA1 Part Number FF600R12ME4WB73BPSA1 Gate... more
Brand Name:Original Factory
Model Number:FF600R12ME4WB73BPSA1
Place of Origin:CN
Automotive IGBT Modules FF600R12ME4WB73BPSA1 600A Transistors IGBT Modules
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...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor...
...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor... more
Brand Name:original
Model Number:TIP41C
Place of Origin:China
NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor
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...Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3 Product Attributes of DTD123ECT116 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr ROHM Series - Product Status Active Transistor...
...Bipolar Transistor 50 V 500 mA 200 MHz 200 mW Surface Mount SST3 Product Attributes of DTD123ECT116 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr ROHM Series - Product Status Active Transistor... more
Brand Name:Original
Model Number:DTD123ECT116
Place of Origin:Original
DTD123ECT116 Bipolar Transistor 50V 500mA 200MHz 200mW Surface Mount SST3
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...Bipolar Transistors - BJT BJTs Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 800 mA Pd - Power Dissipation: 500 mW Gain Bandwidth Product fT: - Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Packaging: Bulk Brand: Microchip / Microsemi Product Type: BJTs - Bipolar Transistors...
...Bipolar Transistors - BJT BJTs Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 800 mA Pd - Power Dissipation: 500 mW Gain Bandwidth Product fT: - Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Packaging: Bulk Brand: Microchip / Microsemi Product Type: BJTs - Bipolar Transistors... more
Brand Name:Microchip / Microsemi
Model Number:JAN2N2222A
Place of Origin:ORIGINAL
JAN2N2222A Microchip Microsemi Bipolar Transistors BJT BJTs RF Transistors
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...BIPOLAR TRANSISTOR ELECTRONIC COMPONENTS SURFACE MOUNT,STANDING Package Type: Surface Mount,Standing Warranty: Global 180 Days Return Shipment: DHL,TNT Package: Standard Package High Light: BCX53 Bipolar Transistor , Bipolar Transistor Electronic Components BCX53 Bipolar Transistor...
...BIPOLAR TRANSISTOR ELECTRONIC COMPONENTS SURFACE MOUNT,STANDING Package Type: Surface Mount,Standing Warranty: Global 180 Days Return Shipment: DHL,TNT Package: Standard Package High Light: BCX53 Bipolar Transistor , Bipolar Transistor Electronic Components BCX53 Bipolar Transistor... more
Brand Name:original
Model Number:BCX53
Place of Origin:Original Factory
Bcx53 Bipolar Transistor Electronic Components Surface Mount Standing
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... Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor ...
... Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor ... more
Brand Name:onsemi
Model Number:MMUN2233LT1G
Place of Origin:USA
MMUN2233LT1G Pre Biased NPN Bipolar Transistor 50V 100 MA 246mW SOT-23-3