-
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well more
Brand Name:IRF
Model Number:IRF7329
Place of Origin:Thailand
-
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5 more
Brand Name:Infineon Technologies
Model Number:IRF7476TRPBF
Place of Origin:Multi-origin
-
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well more
Model Number:IRLL024NTRPBF
Place of Origin:original factory
-
...HEXFET Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET...
...HEXFET Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET... more
Brand Name:International Rectifier
Model Number:IRF7342Q
Place of Origin:PHILIPPINE
-
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRLR3915TRPBF
Minimum Order Quantity:1 piece
-
...104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest ...
...104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest ... more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF
Place of Origin:CHINA
-
...Hexfet Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs...
...Hexfet Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs... more
Brand Name:INFINEON
Model Number:IRF3205PBF
Place of Origin:Germany
-
...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C
...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C more
Brand Name:IR (International Rectifier)
Model Number:IRLML6346TRPBF
Place of Origin:USA
-
...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C
...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit Price: Email us: sales009@eis-limited.com D/C more
Brand Name:IR (International Rectifier)
Model Number:IRLML6346TRPBF
Place of Origin:USA
-
...HEXFET Power MOSFET in a TO-220AB package Features: Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power...
...HEXFET Power MOSFET in a TO-220AB package Features: Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power... more
Brand Name:Original
Model Number:IRF1407
Place of Origin:Guangdong, China
-
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... more
Brand Name:IOR
Model Number:IRFZ44NPBF
Place of Origin:CHINA
-
...MOSFET AUIRF8739L2TR 40V Automotive Single N-Channel HEXFET Power MOSFET Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power...
...MOSFET AUIRF8739L2TR 40V Automotive Single N-Channel HEXFET Power MOSFET Description AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power... more
Brand Name:Original Factory
Model Number:AUIRF8739L2TR
Place of Origin:CN
-
...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...
...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... more
Brand Name:Infineon Technologies
Model Number:IRF3205PBF
Place of Origin:Original
-
...MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process Technology HEXFET...
...MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process Technology HEXFET... more
Brand Name:Infineon
Model Number:IRFB4115PBF
Place of Origin:CHINA
-
...Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ±30V, making it perfect for use in high power applications that require reliable and efficient performance. With its high power rating and excellent performance characteristics, the High Power MOSFET...
...Power MOSFET Heat Dissipation Metal Oxide Mosfet Product Description: The MOSFET is a type N device and has a gate-source voltage (Vgs) of ±30V, making it perfect for use in high power applications that require reliable and efficient performance. With its high power rating and excellent performance characteristics, the High Power MOSFET... more
Brand Name:Lingxun
Place of Origin:China
Certification:IATF16949,ISO9001,ISO14001,ROHS,REACH
-
...MOSFET Product Description: High Power MOSFET is a type of MOSFET with high efficiency, which is widely used in applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, and Charging Pile. It is a N channel MOSFET with high voltage capabilities, providing high power...
...MOSFET Product Description: High Power MOSFET is a type of MOSFET with high efficiency, which is widely used in applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, and Charging Pile. It is a N channel MOSFET with high voltage capabilities, providing high power... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
-
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power more
Brand Name:HT
Model Number:F4N65L TO-220F-3L
Place of Origin:China
-
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power more
Brand Name:STMicroelectronics
Model Number:STP100N8F6
Place of Origin:Shenzhen, China
-
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. more
Brand Name:Hua Xuan Yang
Model Number:2N60
Place of Origin:ShenZhen China
-
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... more
Brand Name:IR Original
Model Number:IR21094STRPBF
Place of Origin:Original & New
