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PTF102028 is a 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor RF Power Transistors. Part NO: Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega Source Electronic Co., LTD specializes in ...
PTF102028 is a 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor RF Power Transistors. Part NO: Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega Source Electronic Co., LTD specializes in ... more
Brand Name:ERICSSON
Model Number:PTF102028
Place of Origin:MALAYSIA
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...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...
...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor... more
Brand Name:original
Model Number:MRF9045LR1
Place of Origin:original
ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...
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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,...
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Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage ...
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MRF175LU N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF175LU #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...
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...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
Brand Name:NXP
Model Number:BFS505
Place of Origin:CHINA
BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ... more
Brand Name:Analog Devices Inc.
Model Number:AD9364BBCZ
Place of Origin:Multi-origin
AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions
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...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...
...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor... more
Brand Name:original
Model Number:M68702H
Place of Origin:Original Manufacturer
150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio
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...RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF...
...RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF... more
Model Number:BFP420H6327
Emitter-Base Voltage(Vebo):1.5V
Current - Collector Cutoff:100nA
Wideband silicon npn rf transistor Infineon BFP420H6327 ideal for oscillators up to 10 ghz frequency
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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ... more
Brand Name:Original brand
Model Number:A3G20S250-01SR3
Place of Origin:Original
Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor...
...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor... more
Brand Name:NXP Semiconductors
Model Number:AFT05MS003NT1
Certification:RoHS
AFT05MS003NT1 NXP MOSFET Transistors N Channel 500mV 30V RF Power
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...Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF
...Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF more
Brand Name:Vishay / Siliconix
Model Number:IRFP260
Part no.:IRFP260
IRFP260 MOSFET Transistor IC Chip TO-247-3 High Powered Through Hole
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SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2 Ohm @ 10mA, 4V Vgs(th) (...
SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2 Ohm @ 10mA, 4V Vgs(th) (... more
Place of Origin:Original
Part Number:SSM6N48FU,RF(D
Manufacturer:Toshiba Semiconductor and Storage
SSM6N48FU,RF(D Field Effect Transistor Transistors FETs MOSFETs Arrays
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...
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... options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems
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...RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 7200MHz. The transistor...
...RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 7200MHz. The transistor... more
Brand Name:INNOTION
Model Number:YP601238T
Place of Origin:Jiangsu, China
7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.